, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1357 description ? high collector current-lc= -5.0a ? dc current gain- : hfe= 70(min)@lc= -4a ? low saturation voltage : vce(sat)= -1.0v(max)@lc= -4a applications ? strobe flash applications. ? audio power amplifier applications. absolute maximum ratings(ta=25'c) pin l.ailtter 2.collector 3. base to-126 package symbol vcbo vceo vebo ic icp ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-pulse base current-continuous collector power dissipation @ tc=25'c collector power dissipation @ ta=25"c junction temperature storage temperature range value -35 -20 -8 -5 -8 -1 10 1.5 150 -55-150 unit v v v a a a w 'c 'c r* r j t h - t d-* f fi -s-> 'm 1 1 g ? i * ? 2 3 dim a b d f g h j k 0 r v "r ; q ?t v (....?, d m nun 10.70 7,70 2.60 0.66 3.10 4.48 2.00 1.35 15.30 3..70 0.40 1.17 -h< t a \ k ~* m max 10.95 7.90 2,30 0,86 3,30 4.63 2.20 1,55 16.30 3.90 ho.&o 1.37 :k- i ') 1 r*-j "-r nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. intbnnation turnished hy nj semi-conductors is helieved to he hoth accurate and reliable at the time of going lo press. i louever. nj .semi-conductors assumes no responsibility for an\s or omissions discovered in its use. n.i semi-conductors encourages customer-; to verity that dutrtshecls are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1357 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(on) icbo iebo hpe-1 hfe-2 fr cob parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc= -10ma; ib=0 ic=-4a; ib=-0.1a lc=-4a ; vce= -2v vcb= -35v; ie= 0 v6b= -8v; lc= 0 lc=-0.5a;vce=-2v lc= -4a ; vce= -2v lc= -0.5a ; vce= -2v le=0;vcb=-10v,ftest=1mhz min -20 100 70 typ. 170 62 max -1.0 -1.5 -0.1 -0.1 320 unit v v v u a u a mhz pf hpe-1 classifications 0 100-200 y 160-320
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